| GaAs MESFET肖特基结参数表征及其应用 |
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| 引用本文： | 黄云,费庆宇. GaAs MESFET肖特基结参数表征及其应用[J]. 电子产品可靠性与环境试验, 2001, 0(3): 14-19 |
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| 作者姓名： | 黄云 费庆宇 |
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| 作者单位： | 信息产业部电子第五研究所, |
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| 摘 要： | 运用双指数函数模型方法分析了影响GaAsMESFET肖特基势垒结特性的各种因素 ,编制了结参数提取和I -V曲线拟合软件 ,实现了通过栅源正向I-V实验数据提取反映肖特基势垒结特性的 6个结参数 ,其结果与实验数据吻合得很好。并对TiAl栅和TiPtAu栅GaAsMESFET进行了高温储存试验前后的结参数对比分析和深能级瞬态谱 (DLTS)验证分析 ,证明这种结参数表征方法是进行器件特性、参数的稳定性与退化和肖特基势垒结质量研究的一种新的实用可行的分析手段。
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| 关 键 词： | 金属半导体场效应晶体管 参数提取 寄生电阻 |
| 修稿时间： | 2001-04-10 |
Parameter Description and Application of GaAs MESFETs Schottky Junction |
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| HUANG Yun,FEI Qing-yu. Parameter Description and Application of GaAs MESFETs Schottky Junction[J]. Electronic Product Reliability and Environmental Testing, 2001, 0(3): 14-19 |
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| Authors: | HUANG Yun FEI Qing-yu |
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| Abstract: | Parameters and characteristics of GaAs Schottky Junction of MESFETs have been analyzed by a two exponential analytical method,and parameter extraction and I-V curve simulation of this Junction have been finished Six junction parameters have been extracted by numerical fit of an experimental I-V curve Satisfy results of fitting of I-V curves have been obtained Comparing analysis of junction parameters and DLTS verification of TiAl gate and TiPtAu gate GaAs MESFET before and after High Temperature Storage Test has been finished The results indicate that the junction parameter characteristics method is a new,useful and valid method for the study of device characteristics,steadiness,degradati on and the quality of Schotty barrier junction |
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| Keywords: | MESFET parameters extraction parasitic resistance |
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