Low Voltage High Output Impedance Bulk-Driven Quasi-Floating Gate Self-Biased High-Swing Cascode Current Mirror

A low voltage self-biased high-swing cascode current mirror using bulk-driven quasi-floating gate MOSFET is proposed in this paper. The proposed current mirror bandwidth and especially the output impedance show a significant improvement compared to prior arts. The current mirror presented is designed using bulk-driven and bulk-driven quasi-floating gate N-channel MOS transistors, which helped it to operate at very low supply voltage of ({pm }0.2,hbox {V}). To achieve high output resistance, the current mirror uses regulated cascode stage followed by super cascode architecture. The small-signal analysis carried out proves the improvement achieved by proposed current mirror. The current mirror circuit operates well for input current ranging from 0 to (250,{upmu }mathrm{A}) with good linearity and shows the bandwidth of 285 MHz. The input and output resistances are found as (240,Omega ) and (19.5,hbox {G}Omega ), respectively. Further, the THD analysis and Monte Carlo simulations carried prove the robustness of proposed current mirror. The complete analysis is done using HSpice on UMC (0.18,upmu mathrm{m}) technology.