Study on Time Domain Characteristics of Memristive RLC Series Circuits

The notion of memristive system was first proposed in 2009. This concept of memory element has been extended from memristors \((\hbox {R}_{\mathrm{M}})\) to memcapacitors \((\hbox {C}_{\mathrm{M}})\) and meminductors \((\hbox {L}_{\mathrm{M}})\). Currently, the above elements are not available as off-the-shelf components. Therefore, based on the realization of a light-dependent resistor (LDR), memristor analog model, memcapacitor and meminductor analog circuit models based on \(\hbox {R}_{\mathrm{M}}-\hbox {C}_{\mathrm{M}}\) and \(\hbox {R}_{\mathrm{M}}-\hbox {L}_{\mathrm{M}}\) converters are first introduced. Then, instead of the traditional resistor, capacitor, and inductor, memristor-, memcapacitor-, and meminductor-equivalent circuits are used to determine the time domain characteristics of the RLC-mode circuits with mem-elements. These circuits are discussed in detail, and in particular, the phenomena caused by the memory characteristics of the mem-elements are studied. This research provides an important reference for further research into mem-element applications in circuit theory.