| 国产半导体器件长期贮存试验研究 |
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| 引用本文： | 高兆丰,童亮,高金环,徐立生.国产半导体器件长期贮存试验研究[J].半导体技术,2010,35(8):800-802. |
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| 作者姓名： | 高兆丰 童亮 高金环 徐立生 |
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| 作者单位： | 国家半导体器件质量监督检验中心,石家庄,050051;国家半导体器件质量监督检验中心,石家庄,050051;国家半导体器件质量监督检验中心,石家庄,050051;国家半导体器件质量监督检验中心,石家庄,050051 |
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| 摘 要： | 分析了在北方实验室条件下,贮存25年的国产商用高频小功率晶体管的特性与可靠性,通过对10批共1460只器件的试验、检测,并与25年前的原始数据进行对比分析,发现了贮存器件存在直流放大倍数(HFE)退化、内引线开路、外引线可焊性失效三种失效模式,并对其失效原因、失效机理进行了分析.在考虑到现代技术可以消除的因素(用充干N2封装或已焊接使用),预计80年代的国产商用高频小功率晶体管贮存失效率水平小于10-7.用贮存25年的实物揭示了国产半导体器件贮存存在的主要失效模式,为国产半导体器件提高贮存可靠性提供了真实可靠的依据.
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| 关 键 词： | 长期贮存 可靠性 失效率 可焊性 水汽含量 |
Research on Long-Term Storage Test of Domestic Semiconductor Devices |
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| Gao Zhaofeng,Tong Liang,Gao Jinhuan,Xu Lisheng.Research on Long-Term Storage Test of Domestic Semiconductor Devices[J].Semiconductor Technology,2010,35(8):800-802. |
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| Authors: | Gao Zhaofeng Tong Liang Gao Jinhuan Xu Lisheng |
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| Affiliation: | Gao Zhaofeng,Tong Liang,Gao Jinhuan,Xu Lisheng(National Semiconductor Devices Quality Supervision and Inspection Center,Shijiazhuang 050051,China) |
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| Abstract: | The characteristics and reliabilities of domestic commercial high-frequency low-power transistors were analyzed,which were stored in northern laboratory conditions for 25 years.Compared with the original data 25 years ago,through the test and inspection of 10 batches amount to 1 460 devices,three failure modes of stored devices were found,such as the degeneration of HFE,the opening of inner down-lead and the solderability failure of external down-lead.Then the failure reasons and mechanisms were analyzed.Co... |
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| Keywords: | long term storage reliability failure rate solderability vapor content |
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