Inversion of the impurity conductivity sign in As2Se3:Bi films deposited by two different methods |
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| Authors: | N. G. Almasov O. Yu. Prikhodko K. D. Tsendin |
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| Affiliation: | 1. Al-Farabi Kazakh National University, Almaty, 050038, Kazakhstan
2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
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| Abstract: | It is demonstrated that As2Se3:Bi x films deposited by thermal evaporation have p-type impurity conductivity, whereas films of the same composition, produced by ion-plasma cosputtering in vacuum exhibit n-type impurity conductivity. On the basis of these results, a new method is suggested for the fabrication of p-n homojunctions in film structures made of chalcogenide glassy semiconductors doped with bismuth in various ways. |
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