Effect of V2O5 Doping on the Sintering and Dielectric Properties of M-Phase Li1+x−yNb1−x−3yTix+4yO3 Ceramics |
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Authors: | Albina Y Borisevich Peter K Davies |
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Affiliation: | Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104-6272 |
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Abstract: | The effect of the addition of V2O5 on the structure, sintering and dielectric properties of M -phase (Li1+ x ? y Nb1? x ?3 y Ti x +4 y )O3 ceramics has been investigated. Homogeneous substitution of V5+ for Nb5+ was obtained in LiNb0.6(1? x )V0.6 x Ti0.5O3 for x ≤ 0.02. The addition of V2O5 led to a large reduction in the sintering temperature and samples with x = 0.02 could be fully densified at 900°C. The substitution of vanadia had a relatively minor adverse effect on the microwave dielectric properties of the M -phase system and the x = 0.02 ceramics had alt epsilon]r= 66, Q × f = 3800 at 5.6 GHz, and τf= 11 ppm/°C. Preliminary investigations suggest that silver metallization does not diffuse into the V2O5-doped M -phase ceramics at 900°C, making these materials potential candidates for low-temperature cofired ceramic (LTCC) applications. |
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Keywords: | vanadium/vanadium compounds sinter/sintering dielectric materials/properties |
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