激光束感应电流法研究HgCdTe电活性缺陷和焦平面器件的光电特性

用高分辨率的、非破坏的光学表征技术的激光束感应电流研究碲镉汞（MCT）晶片中电活性缺陷和光伏型红外碲镉汞焦平面器件及光伏型硅光电器件P－N结光电特性，实验表明在MCT晶片中探测到激光束感应电流，在光伏型P－N结构的器件中，观察到周期结构的激光束感应电流分布。定性地观察激光束感应电流图谱以及定量地分析单个P－N结的感应电流分布形状可以判断器件的均匀性和器件的质量。

ELECTRICALLY ACTIVE DEFECTS IN HgCdTe AND OPTO-ELECTRONIC PROPER- TIES OF FOCAL PLANE ARRAY BY LASER BEAM INDUCED CURRENT

A high resolution and nondestructive optical characterization technique called laser beam induced current (LBIC) was utilized to detect electrically active defects in HgCdTe wafers. It was also used to study the opto electronic properties in photovoltaic detector elements for focal plane array without the requirement of any electrical contacts to individual detector elements. The LBIC was detected in HgCdTe wafers. The periodic distribution of LBIC was observed in photovoltaic detector with P N junction array. The uniformity for the performance of the diodes in an array can then be assessed by examining qualitatively the LBIC image and by analyzing quantitatively the profile of LBIC signal corresponding to individual diodes.