Selective silicon epitaxial growth by LPCVD using silane |
| |
Authors: | Parker G.J. Starbuck C.M.K. |
| |
Affiliation: | Dept. of Electron. & Comput. Sci., Southampton Univ., UK; |
| |
Abstract: | Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0.7 mu m thickness showing excellent uniformity and selectivity without the use of HCl are presented.<> |
| |
Keywords: | |
|