Quantum-confined Stark effect modulators at 1.06 μm on GaAs |
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| Authors: | Fan C Shih DW Hansen MW Esener SC Wieder HH |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA; |
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| Abstract: | Electroabsorption modulation is achieved at or near a wavelength of 1.06 μm with InxAlyGa1-x-yAs/In xGa1-xAs multiple-quantum-well (MQW) structures grown on GaAs substrates. The lattice mismatch (close to 2%) between the MQW and the substrate is accommodated by a compositional-step-graded buffer array. A dislocation density of less than 107/cm2 is estimated for the MQW region. For 80-to-100 Å well widths, a maximum electroabsorption coefficient of 8000 cm-1 with an applied voltage of 15 V is obtained |
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