| 溅射和激光淀积的ZnO多晶薄膜的结构和发光性质 |
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| 作者姓名： | XIONGGang UCERKB WILLIAMSRT TANGPing LINBi-xia FUZhu-xi |
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| 作者单位： | [1]DepartmentofPhysics,WakeForestUniversity,WinstonSalem,NC27109-7507,USA／／PacificNorthwestNationalLaboratory,P.O.Box999,K8-88,Richland,WA99352,USA [2]DepartmentofPhysics,WakeForestUniversity,WinstonSalem,NC27109-7507,USA [3]PhysicsDepartment,UniversityofScienceandTechnologyofChina,HefeiAnhui230026,China |
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| 摘 要： | 我们分别通过直流反应溅射及脉冲激光淀积法制备了ZnO多晶薄膜。X射线衍射结果显示出薄膜的c轴取向。原子力显微镜证实薄膜的多晶结构。两种方法制备的ZnO在光子激发下都发射较强的带边荧光。绿色荧光未被观察到。激光淀积在(001)硅表面的ZnO的发光源自“自由激子”辐射。激光淀积在(0001)氧化铝晶体表面的ZnO的发光机制则在相当宽的激发强度范围内都呈现出电子．空穴等离子体(electron-hole plasma)的复合特性。
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| 关 键 词： | 激光淀积 ZnO多晶薄膜 发光性质 直流反应溅射 |
| 文章编号： | 1000-6281(2005)03-0178-07 |
Structure and photoluminescence of ZnO polycrystalline films grown by sputtering and pulsed laser deposition |
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| XIONGGang UCERKB WILLIAMSRT TANGPing LINBi-xia FUZhu-xi.Structure and photoluminescence of ZnO polycrystalline films grown by sputtering and pulsed laser deposition[J].Journal of Chinese Electron Microscopy Society,2005,24(3):178-184. |
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| Authors: | XIONG Gang UCER K B WILLIAMS R T TANG Ping LIN Bi-xia FU Zhu-xi |
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| Abstract: | ZnO polycrystalline films were grown on Si(001) and Al_2O_3(0001) substrates by reactive sputtering and pulsed laser deposition in oxygen ambient. X-ray diffraction graphs showed c-axis orientation. Atomic force microscopy showed polycrystalline structure of films. Annealing substantially improved the grain size and c-axis orientation. Samples grown by both techniques exhibited band edge photoluminescence,while the green defect luminescence was not observed. The photoluminescence of ZnO samples grown on Si(001) is attributed to free exciton radiation, while luminescence of samples with similar grain size but grown on sapphire is attributed to electron-hole plasma recombination at a very broad range of excitation intensities. |
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| Keywords: | ZnO atomic force microscopy sputtering pulsed laser deposition luminescence |
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