Electrical Characterization of Different Passivation Treatments for Long-Wave Infrared InAs/GaSb Strained Layer
Superlattice Photodiodes |
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| Authors: | Koushik Banerjee Siddhartha Ghosh Shubhrangshu Mallick Elena Plis Sanjay Krishna |
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| Affiliation: | (1) Laboratory for Photonics and Magnetics (ECE Department), University of Illinois, Chicago, 851 S. Morgan Street, Chicago, IL 60607, USA;(2) EPIR Technologies, Inc., 590 Territorial Drive, Unit B, Bolingbrook, IL 60440, USA;(3) Center for High Technology Materials (ECE Department), University of New Mexico, 1313, Goddard Street SE, MSC04 2710, Albuquerque, NM 87106, USA |
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| Abstract: | Silicon dioxide (SiO2), silicon nitride (Si
x
N
y
), and zinc sulfide (ZnS) with ammonium sulfide (NH4)2S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with
a 0% cutoff wavelength of ∼10 μm. SiO2 did not show significant improvement and the zero-bias resistance-area product (R
0
A) was 0.72 Ω-cm2 at 77 K. Si
x
N
y
passivation showed a nominal improvement with an R
0
A value of 4.1 Ω-cm2 at 77 K. ZnS with (NH4)2S treatment outperformed others significantly, improving the R
0
A value to 492 Ω-cm2 at 77 K. Variable-area diode measurements indicated a bulk-limited R
0
A value of 722 Ω-cm2. ZnS-passivated diodes exhibited maximum surface resistivity with a value of 2500 Ω-cm. |
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| Keywords: | Passivation long-wavelength infrared strained layer superlattice |
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