Direct sub-100-nm patterning of an organic low-k dielectric for electrical and optical interconnects |
| |
| Authors: | Jeffrey M Catchmark Guy P Lavallee Michael Rogosky Youngchul Lee |
| |
| Affiliation: | (1) Nanofabrication Facility, Department of Engineering Science and Mechanics, College of Engineering, The Pennsylvania State University, 16802 University Park, PA;(2) Nanofabrication Facility, The Pennsylvania State University, USA |
| |
| Abstract: | Low-k dielectric materials compatible with copper interconnect fabrication processes extending to the sub-50-nm technology
nodes are desired for high speed integrated circuit (IC) fabrication. We demonstrate that bisbenzocyclobutene (BCB), an organic
low-k dielectric material, can be patterned with sub-100-nm resolution using electron beam lithography, providing new avenues
for nanoscale electrical and optical interconnect fabrication. |
| |
| Keywords: | Bisbenzocyclobutene (BCB) cyclotene copper interconnects copper diffusion damascene low-k dielectric interlayer dielectric E-beam patterning direct write |
| 本文献已被 SpringerLink 等数据库收录！ |
