Electrical Properties of a Bismuth Layer-Structured Ba2Bi4Ti5O18 Single Crystal

Ba₂Bi₄Ti₅O₁₈ single crystals were grown, and their dielectric permittivity, conductivity, and ferroelectricity were investigated along the a -(or b -)axis and the c -axis separately. The dielectric permittivity at 1 MHz along the a -(or b -)axis was 2000 at the Curie temperature (360°C); this value was 8 times greater than that along the c -axis. The dc conductivity was greater along the a -(or b -)axis than that along the c -axis, by one order of magnitude. In regard to the ferroelectricity, the saturated remanent polarization was 120 mC/m² and the saturated coercive field was 3 MV/m along the a -(or b -)axis; values of 8.5 mC/m² and 0.81 MV/m, respectively, were observed along the c -axis. The Ba₂Bi₄Ti₅O₁₈ single crystals had large electrical anisotropies, which were due to the layered structure.