| Co-Mg-NiO系氧敏材料的研究 |
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| 引用本文： | 魏红,陈洪龄. Co-Mg-NiO系氧敏材料的研究[J]. 传感器与微系统, 2000, 19(4): 17-19 |
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| 作者姓名： | 魏红 陈洪龄 |
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| 作者单位： | 1. 南京化工大学,信息科学与工程学院,江苏,南京,210009
2. 南京化工大学,化工学院,江苏,南京,210009 |
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| 摘 要： | 研究了Co -Mg -NiO系氧敏材料在氧分压为 1～ 10 -2 3 atm(1atm =10 1.32 5kPa) ,温度为 70 0～10 0 0℃范围内的电导率与氧分压及温度的关系 ,讨论了材料的氧敏特性、导电机理 ,得出高温下材料中的缺陷类型随氧分压的降低主要是单电离和双电离的金属缺位 ,并得到了材料的某些参数。
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| 关 键 词： | 氧敏材料 电导率 缺陷 |
Research for oxygen sensitive materials of Co-Mg-NiO |
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| WEI Hong,CHEN Hong-ling. Research for oxygen sensitive materials of Co-Mg-NiO[J]. Transducer and Microsystem Technology, 2000, 19(4): 17-19 |
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| Authors: | WEI Hong CHEN Hong-ling |
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| Affiliation: | WEI Hong 1,CHEN Hong-ling 2 |
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| Abstract: | Dependence of the electrical conductivity of Co-Mg-NiO materials on the oxygen partial pressure and the temperature were investigated at the 700～1?000?℃ temperature range at oxygen partial pressures between 1～ 10 -23 ?atm(1?atm=101.325?kPa). Oxygen sensing machanism and electrical c onductivity were studied. The results show that the defects of the matierals app ear to be singly ionized and doubly ionized, and some parameters are presented. |
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| Keywords: | oxygen sensitive materials electrica l conductivity defect |
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