Anodic oxidation and dielectric behaviour of aluminium-niobium alloys

The anodizing behaviour of sputtering-deposited Al-Nb alloys, containing 21, 31 and 44 at.% niobium, has been examined in 0.1 M ammonium pentaborate electrolyte with interest in the composition and the dielectric properties of the anodic oxides. RBS and TEM revealed amorphous oxides, containing units of Nb₂O₅ and Al₂O₃ in proportion to the alloy composition. Xenon marker experiments indicated their growth through migration of the Nb⁵⁺, Al³⁺ and O²⁻ species, with cation transport numbers, in the range 0.31-0.35, and formation ratios, in the range 1.35-1.64 nm V⁻¹, intermediate between those of anodic alumina and anodic niobia. Al³⁺ ions migrate slightly faster than Nb⁵⁺ ions, promoting a thin alumina layer at the film surface, although this layer is penetrated by fingers of the underlying niobium-containing oxide of relatively reduced ionic resistivity. The incorporation of units of Nb₂O₅ into anodic alumina increases the dielectric constant from about 9 to the range 11-22 for the investigated alloys.