Superconducting epitaxial $$hbox {YBa}_{2}hbox {Cu}_{3}hbox {O}_{7-delta }$$ on $$hbox {SrTiO}_{3}$$SrTiO3-buffered Si(001) |
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Authors: | K Ahmadi-Majlan H Zhang X Shen M J Moghadam M Chrysler P Conlin R Hensley D Su J Y T Wei J H Ngai |
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Affiliation: | 1.Department of Physics,University of Texas at Arlington,Arlington,USA;2.Department of Physics,University of Toronto,Toronto,Canada;3.Center for Functional Nanomaterials,Brookhaven National Laboratory,Upton,USA;4.National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering,Nanjing University,Nanjing,People’s Republic of China |
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Abstract: | Thin films of optimally doped(001)-oriented (hbox {YBa}_{2}hbox {Cu}_{3}hbox {O}_{7-updelta }) are epitaxially integrated on silicon(001) through growth on a single crystalline (hbox {SrTiO}_{3}) buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the (hbox {SrTiO}_{3}) buffer enables high quality (hbox {YBa}_{2}hbox {Cu}_{3}hbox {O}_{7-updelta }) films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick (hbox {SrTiO}_{3}) buffer, 50-nm thick (hbox {YBa}_{2}hbox {Cu}_{3}hbox {O}_{7-updelta }) films that exhibit a transition temperature of (sim )93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline (hbox {YBa}_{2}hbox {Cu}_{3}hbox {O}_{7-updelta }) on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications. |
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