| 高功率非对称大光腔半导体激光器的研制 |
| |
| 引用本文： | 王向武.高功率非对称大光腔半导体激光器的研制[J].河北工业大学学报,1991(4). |
| |
| 作者姓名： | 王向武 |
| |
| 作者单位： | 南京电子器件研究所 |
| |
| 摘 要： | 研制了高功率非对称大光腔半导体激光器。脉冲阈值电流为4-5A,在工作电流为4倍阈值时,激光器单面输出峰值功率为10-12W,其灾变功率大于20W;得到了对称的远场光强分布;器件工作寿命大于1000小时。
|
| 关 键 词： | 半导体激光器 非对称 大光腔 脉冲 阈值电流 单面输出 峰值功率 光强分布 |
The Development of High-Power AsymmetricalLOC Semiconductor Lasers |
| |
| Wang Xiangwu.The Development of High-Power AsymmetricalLOC Semiconductor Lasers[J].Journal of Hebei University of Technology,1991(4). |
| |
| Authors: | Wang Xiangwu |
| |
| Affiliation: | Wang Xiangwu |
| |
| Abstract: | The high-power asymmetrical LOC semiconductor lasers have been fabricated. When the pulsed threshold current is 4-5 A, and operative current is 4-times as much as the threshold value, the peak power is 10-12W/facet, and the catastrophic damage power exceeds 20W, the symmetrical farfield optical distribution is obtained and the lasers' life time exceeds 1000h. |
| |
| Keywords: | Semiconductor laser Asymmetrical LOC(Large Optical Cavity)Pulse Threshold curreht Operative current Peak power Opticaldistribution |
| 本文献已被 CNKI 等数据库收录！ |
