| P型SiC欧姆接触高温可靠性的研究进展 |
| |
| 引用本文： | 赵晨光,刘肃,姜岩峰. P型SiC欧姆接触高温可靠性的研究进展[J]. 电力电子技术, 2007, 41(6): 99-101 |
| |
| 作者姓名： | 赵晨光 刘肃 姜岩峰 |
| |
| 作者单位： | 兰州大学,甘肃,兰州,730000;北方工业大学,北京,100041;兰州大学,甘肃,兰州,730000;北方工业大学,北京,100041 |
| |
| 摘 要： | 介绍了P型碳化硅(SiC)欧姆接触在高温应用时的可靠性问题.首先,对在P型SiC上实现欧姆接触的工艺方法进行了综述,讨论了如何克服费米钉扎等关键问题;其次,在了解如何实现欧姆接触工艺的基础上,研究了影响该材料高温稳定工作的原因.从材料、工艺两方面总结了如何提高接触可靠性的方法,并尝试性提出了改进思路.
|
| 关 键 词： | 电力半导体器件 碳化硅 可靠性/欧姆接触 高温可靠性 |
| 文章编号： | 1000-100X（2007）06-0099-03 |
| 修稿时间： | 2006-11-14 |
Study Evolution on the Ohmic Contact for P-type SiC Reliability in High Temperature |
| |
| ZHAO Chen-guang,LIU Su,JIANG Yan-feng. Study Evolution on the Ohmic Contact for P-type SiC Reliability in High Temperature[J]. Power Electronics, 2007, 41(6): 99-101 |
| |
| Authors: | ZHAO Chen-guang LIU Su JIANG Yan-feng |
| |
| Affiliation: | 1.Lanzhou University, Lanzhou 730000, China; 2.North China University of Technology, Beijing 100041, China |
| |
| Abstract: | In this paper reliability of ohmic contact for P-type is introduced in high temperature application.Firstly we describe numbers of technics and technology on the ohmic contact for P-type SiC ,which includes how to solve sixty-fourdollar question of the fermi pinning.Based on the ohmic contact technics we illuminate the material reliability which is affected by high temperature.So we summarize how to improve technical reliability on the ohmic contact through material and technics, and attempt to give the better way. |
| |
| Keywords: | power semiconductor SiC reliability/ohmic contact high temperature reliability |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
