硅纳米线用于纳米器件前的准备工序

硅纳米线是一种新型半导体光电材料，具有量子限制效应并且能与目前的硅芯片相兼容，是一种很有前途的适用于纳米器件的材料，未经处理的硅纳米线存在大量的晶体缺陷以及表面氧化物保护层，直接将这样的硅纳米线应用于纳米器件中时，表面氧化层的保护作用使硅纳米线在电子器件中应用时不能有效地实现欧姆接触，因此对硅纳米线使用前的前期处理是非常必要的。本文主要针对硅纳米线应用于电子器件的准备工序包括为制备完整硅纳米线晶体结构而进行的减少缺陷处理、避免硅纳米线团聚而进行的分散处理，以及使硅纳米线具有有效欧姆接触而进行的表面金属离子处理等作系统的阐述。

Preparation Process of Silicon Nanowires for Application in Nanodevices

Silicon nanowire (SiNW) is a new kind of semiconductor optoelectronic material. SiNW in the nanosize regime exhibits quantum restriction effect and is compatible with modern silicon technology. But as-grown SiNWs have lots of crystal defects and the core of SiNWs surrounded by an amorphous silica shell. The defects do not only affect the structural integrity of the wire but also their electronic characteristics. When the as-grown SiNWs are used for nanodevices, it is difficult to realize ohmic contact because of the amorphous silica shell. So the SiNWs must be treated before applied in nanodevice. Here we report the necessary preparation processes of SiNWs, including defect reduction treatment to consummate crystal structure, disperse treatment to avoid aggregation of SiNWs and surface treatment with metallic ion to ensure the Ohmic contact etc.