| P波段硅脉冲功率管工程实用化研究 |
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| 引用本文： | 王于辉,高颖,崔恩录,秦仲波,郝金中. P波段硅脉冲功率管工程实用化研究[J]. 微纳电子技术, 1999, 0(5) |
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| 作者姓名： | 王于辉 高颖 崔恩录 秦仲波 郝金中 |
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| 作者单位： | 河北半导体研究所!石家庄050051 |
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| 摘 要： | 详尽介绍了３ＤＡ５０２ 型硅脉冲功率晶体管工程实用化的研究过程。围绕可靠性综合设计开展六项专题研究， 并辅以用红外热象法监测结温和射频加速寿命试验法， 保证器件的长期使用可靠性， 为雷达全固化创造了基础条件
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| 关 键 词： | 微波 功率晶体管 可靠性 |
Engineering Application Study on P band Si Pulsed Power Transistor |
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| Wang Yuhui,Gao Ying,Cui Enlu,Qin Zhongbo,Hao Jinzhong. Engineering Application Study on P band Si Pulsed Power Transistor[J]. Micronanoelectronic Technology, 1999, 0(5) |
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| Authors: | Wang Yuhui Gao Ying Cui Enlu Qin Zhongbo Hao Jinzhong |
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| Abstract: | The engineering application of model 3DA502 silicon pulsed power transistor is introduced in detail.Consideration on reliability design is proposed.Junction monitoring by infrared thermal image and RF accelarated life test guarantee durable reliability. |
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| Keywords: | Microwave Power transistor Reliability |
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