| Abstract: | The size dependences of the Fermi energy of metallic films of Al and Pb bordering with the dielectrics SiO2, Al2O3, HfO2, ZrO2, and TiO2 have been calculated. The model of free electrons and an asymmetric potential well has been modified by the introduction of the effective masses of electrons in the metal and in the insulator. The evolution of the size oscillations of the Fermi energy of metallic films in different dielectric surroundings upon the variation of the effective masses of electrons both in the metal and in the insulator has been analyzed. It has been shown that the allowance for the effective mass of electrons in the metal leads to a more substantial change in the position of the Fermi level in comparison with the allowance for the effective mass of the dielectric. |
