TEM characterization of Ge precipitates in an Al-1.6at% Ge alloy |
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Authors: | Kaneko K Inoke K Sato K Kitawaki K Higashida H Arslan I Midgley P A |
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Affiliation: | Department of Material Science and Engineering, Kyushu University, 744 Motooka, Nishi, Fukuoka, Japan. kaneko@zaiko.kyushu-u.ac.jp |
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Abstract: | The growth mechanism and morphology of Ge precipitates in an Al-Ge alloy was characterized by a combination of in-situ transmission electron microscopy, high-resolution transmission electron microscopy and three-dimensional electron tomography. Anisotropic growth of rod-shaped Ge precipitates was observed by in-situ transmission electron microscopy over different time periods, and faceting of the precipitates was clearly seen using high-resolution transmission electron microscopy and three-dimensional electron tomography. This anisotropic growth of rod-shaped Ge precipitates was enhanced by vacancy concentration as proposed previously, but also by surface diffusion as observed during the in-situ experiment. Furthermore, a variety of precipitate morphologies was identified by three-dimensional electron tomography. |
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Keywords: | 61 66Dk 68 73Lp 81 70Tx |
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