| 采用寄生补偿的高效率逆F类GaN HEMT功率放大器 |
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| 引用本文： | 尤览,丁瑶,杨光,刘发林.采用寄生补偿的高效率逆F类GaN HEMT功率放大器[J].微波学报,2011,27(5):50-54. |
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| 作者姓名： | 尤览 丁瑶 杨光 刘发林 |
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| 作者单位： | 中国科学技术大学电子工程与信息科学系,合肥,230027 |
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| 基金项目： | 新一代宽带无线移动通信网科技重大专项(2010ZX03007-003-01); 华为高校科技基金 |
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| 摘 要： | 为了提高无线通信系统的工作效率,提出了一种基于逆F类结构的新型高效率功率放大器。结合功率晶体管的寄生参数,设计了一种添加了寄生补偿电路的输出端谐波控制网络,对2到5次谐波阻抗进行了处理。针对电路中寄生反馈元件的存在,在输入端对2次和3次谐波阻抗也分别进行了开路和短路处理。该功率放大器选用GaN工艺的HEMT器件作为功率晶体管,当工作在940MHz频率时,经测试所获得的最大漏极效率为87.4%,最大功率附加效率为78.6%,饱和输出功率为39.8dBm。
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| 关 键 词： | 逆F类 高效率 寄生补偿 功率放大器 |
A High Efficiency GaN HEMT Inverse Class-F Power Amplifier Using Parasitic Compensation |
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| YOU Lan,DING Yao,YANG Guang,LIU Falin.A High Efficiency GaN HEMT Inverse Class-F Power Amplifier Using Parasitic Compensation[J].Journal of Microwaves,2011,27(5):50-54. |
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| Authors: | YOU Lan DING Yao YANG Guang LIU Falin |
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| Affiliation: | YOU Lan,DING Yao,YANG Guang,LIU Fa-lin(Department of Electronic Engineering and Information Science,University of Science and Technology of China,Hefei 230027,China) |
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| Abstract: | A novel high efficiency inverse class-F power amplifier is designed for improving the efficiency performance of the wireless communication systems.Considering the parasitic elements of the power transistor,a parasitic compensation circuit is added into the harmonic control network at the output node to optimize the 2nd-5th harmonic impedances.The 2nd and 3rd harmonic impedances are also matched to open and short respectively at the input node,due to the existence of parasitic feedback elements.According to ... |
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| Keywords: | inverse class-F high efficiency parasitic compensation power amplifier |
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