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Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications |
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| Authors: | Chugh Nisha Kumar Manoj Bhattacharya Monika Gupta R S |
| Affiliation: | 1.University School of Information, Communication and Technology, Guru Gobind Singh Indraprastha University, Dwarka, New Delhi, 110078, India ;2.Department of Electronics, Acharya Narendra Dev College, University of Delhi, Kalkaji, New Delhi, 110019, India ;3.Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, Sector-22, Rohini, New Delhi, 110086, India ; |
| Abstract: | Microsystem Technologies - An analytical model for determining intrinsic short-circuit admittance (Y) parameters of AlGaN/GaN/AlGaN Double Heterostructure (DH) High Electron Mobility Transistor... |
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