Characterization and analysis of low-noise GaN-HEMT based inverter circuits |
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| Authors: | Paul Sritoma Mondal Shubham Sarkar Angsuman |
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| Affiliation: | 1.Department of Electronics and Communication Engineering, Kalyani Government Engineering College, Kalyani, Nadia, West Bengal, 741235, India
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| Abstract: | Microsystem Technologies - In this work, the authors have propounded a novel Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) structure and have analyzed its DC, RF and noise... |
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