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An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers
Authors:Huang  Huixiang  Wei  Sufen  Pan  Jinyan  Xu  Wenbin  Mei  Qiang  Chen  Jinhai  Geng  Li  Zhang  Zhengxuan  Chen  Chi-Cheng
Affiliation:1.Information and Engineering College, Jimei University, Fujian, 361021, China
;2.National-Local Joint Engineering Research Center for Marine Navigation Aids Services, Navigation College, Jimei University, Xiamen, 361021, China
;3.School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, 710049, Shaanxi, China
;4.The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
;
Abstract:Microsystem Technologies - The objective of this study is to present an analytical subthreshold swing model for fully-depleted metal-oxide semiconductor field-effect transistors (MOSFETs) with...
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