| 光电双向负阻晶体管的研制及特性分析 |
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| 引用本文： | 郭维廉,张世林,刘娜,李树荣,沙亚男,毛陆虹,郑云光. 光电双向负阻晶体管的研制及特性分析[J]. 半导体光电, 2001, 22(4): 266-270,274 |
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| 作者姓名： | 郭维廉 张世林 刘娜 李树荣 沙亚男 毛陆虹 郑云光 |
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| 作者单位： | 天津大学电子信息工程学院, |
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| 摘 要： | 首次对双向负阻晶体管(BNRT)进行了光敏化,设计并研制出既有光敏特性又有“S”型负阻特性的一种新型光电开关器件——光电双向负阻晶体管(PBNRT)。介绍了器件的设计和研制过程;测量分析了其J—V特性与光强和栅极电压的关系;测量了光电开关的时间常数并进行了分析讨论。
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| 关 键 词： | 双向“S”型负阻器件 光电双向负阻晶体管 光电开关 |
| 文章编号： | 1001-5868(2001)04-0266-05 |
Fabrication and Characteristic Analysis of Photo-bidirectional Negative Resistance Transistor |
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| GUO Wei lian,ZHANG Shi lin,LIU Na,LI Shu rong,SHA Ya nan,MAO Lu hong,ZHENG Yun guang. Fabrication and Characteristic Analysis of Photo-bidirectional Negative Resistance Transistor[J]. Semiconductor Optoelectronics, 2001, 22(4): 266-270,274 |
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| Authors: | GUO Wei lian ZHANG Shi lin LIU Na LI Shu rong SHA Ya nan MAO Lu hong ZHENG Yun guang |
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| Abstract: | By means of photo sensitization a photo bidirectional negative resistance transistor (PBNRT) have been designed and fabricated for the first time.This new optical switching device has both light sensitive and"S"type negative resistance characteristics.In this paper,the relationship between light intensity and gate voltage affecting I V characteristics is measured and analyzed,together with the optical and electrical switching time. |
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| Keywords: | bidirectional " S" negative resistance device,PBNRT,optical-electrical switching |
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