Development of a novel image intensifier of an amplifiedmetal-oxide semiconductor imager overlaid with electron-bombardedamorphous silicon

We developed a novel image intensifier (II) of an amplified metal-oxide-semiconductor (MOS) imager (AMI) overlaid with electron-bombarded (EB) amorphous silicon (a-Si). The electron bombardment gain (EB gain) was 1500 at an accelerating voltage of 10 kV. Since the multiplication process was free from a phosphorescent screen and a coupling fiber plate as in the conventional II, the resolution was high and the picture quality was good and free from granularity noises, white spots, lag and sticking. As for fatigue of X-ray irradiation, the contrasts of a vertical stripe (Smear) are not detectable and damaged areas in AMI are weak whereas both of those in charge-coupled devices (CCDs) are strong