Design and modeling of self-aligned nano-imprinted sub-micrometer pentacene-based organic thin-film transistors |
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| Authors: | F. Zanella,N. Marjanović,R. Ferrini,H. Gold,A. Haase,A. Fian,B. Stadlober,R. Mü ller,J. Genoe,H. Hirshy,A. Drost,M. Kö nig,K.-D. Lee,J. Ring,R. Pré tô t,C.C. Enz,J.-M. Sallese |
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| Affiliation: | 1. CSEM Muttenz, Tramstrasse 99, 4132 Muttenz, Switzerland;2. Institute of Nanostructured Materials and Photonics, Joanneum Research GmbH, Franz-Pichlerstrasse 30, 8160 Weiz, Austria;3. imec, Kapeldreef 75, B-3001 Heverlee, Belgium;4. Institute of Mechanical and Manufacturing Engineering, Cardiff University, Cardiff CF24 3AA, Wales, UK;5. Fraunhofer EMFT, Hansastrasse 27 d, 80686 München, Germany;6. Obducat Technologies AB, Scheelevägen 2, SE-223 63 Lund, Sweden;g BASF Schweiz AG, Areal Rosental, Schwarzwaldallee 215, 4057 Basel, Switzerland;h Swiss Federal Institute of Technology, EPFL, Station 11, 1015 Lausanne, Switzerland |
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| Abstract: | Sub-micrometer channel length (0.5 μm) organic thin-film transistors (OTFTs) are demonstrated using a process flow combining nano-imprint lithography (NIL) and self-alignment (SA). A dedicated test structure was designed and samples were fabricated on 4-in. plastic foils using a p-type sublimated small molecule (pentacene) as semiconductor. Field-effect mobilities, in saturation, between 0.1 and 1 cm2/Vs were obtained not only for the supermicron OTFTs but also for the submicron OTFTs. Those devices were used to select a model based on the “TFT Generic Charge Drift model” which works well for a broad range of channel lengths including the submicron OTFTs. We show that these OTFTs can be accurately modeled, thus giving access to complex circuit simulations and design. |
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| Keywords: | Self-alignment NIL Submicron channel OTFT OFET Model |
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