Room-temperature magnetoresistance in organic spin-valves based on a Co2MnSi Heusler alloy |
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Authors: | Yoshitaka Kawasugi Tomohiro UjinoHirokazu Tada |
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Affiliation: | Division of Materials Physics, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan |
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Abstract: | We report room-temperature magnetoresistance in sandwich structures consisting of Co2MnSi/organic spacer/Co. We have prepared the epitaxial films of a Heusler alloy Co2MnSi on MgO (001) by pulsed laser deposition, followed by thermal depositions of organic and Co layers. The spin-valve with an organic layer of N,N-bis (3-methylphenyl)-N,N-diphenylbenzidine exhibited a positive magnetoresistance ratio of up to 7.8%, which was the highest value among organic spin-valves at room temperature. |
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Keywords: | Organic spin valve Heusler alloy Magnetoresistance |
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