| 不同集电结结构的AlGaInP/GaAs异质结双极晶体管 |
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| 引用本文： | 李冰寒,刘文超,周健,夏冠群. 不同集电结结构的AlGaInP/GaAs异质结双极晶体管[J]. 固体电子学研究与进展, 2005, 25(3): 294-298,314 |
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| 作者姓名： | 李冰寒 刘文超 周健 夏冠群 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,上海,200050;中国科学院上海微系统与信息技术研究所,上海,200050;中国科学院上海微系统与信息技术研究所,上海,200050;中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 摘 要： | 设计并制备了三种不同集电结结构的A lG aInP/G aA s异质结双极晶体管,计算给出了三种集电结能带结构。通过对三种HBT的直流特性测试表明,N pN型HBT因异质集电结的导带尖峰出现电子阻挡效应;N p iN型HBT集电结引入i-G aA s层能有效克服电子阻挡效应,同时还具有拐点电压Vknee小、开启电压Voffset小、击穿电压BVCEO大等优点,但由于i-G aA s层引入增加了基区电子扩散长度,使器件电流增益有所下降。
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| 关 键 词： | 异质结双极晶体管 铝镓铟磷/砷化镓 直流特性 |
| 文章编号： | 1000-3819（2005）03-294-05 |
| 收稿时间： | 2003-08-22 |
| 修稿时间： | 2003-08-222003-12-22 |
DC Performance of AlGaInP/GaAs HBT with Different Base/Collector Junction Structure |
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| LI Binghan,LIU Wenchao,ZHOU Jian,XIA Guanqun. DC Performance of AlGaInP/GaAs HBT with Different Base/Collector Junction Structure[J]. Research & Progress of Solid State Electronics, 2005, 25(3): 294-298,314 |
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| Authors: | LI Binghan LIU Wenchao ZHOU Jian XIA Guanqun |
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| Abstract: | Three large-scale Heterojunction Bipolar Transistors with different base/collector junction structure have been fabricated by using AlGaInP/GaAs HBT material grown by MOCVD.The electron repelling effect of the conduction-band spike formed at the collector heterojunction was obtained at the transistors with a p~ -GaAs/N-AlGaInP base/collector junction structure.To overcome this effect a thin i-GaAs layer was inserted between the base and the AlGaInP wide-gap collector.Transistors with a p~ -GaAs/i-GaAs/N-AlGaInP base/collector junction structure show excellent current/voltage characteristics. |
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| Keywords: | HBT AlGaInP/GaAs DC characteristics |
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