Impact of ultrashallow junction on hot carrier degradation ofsub-0.25-μm nMOSFETs |
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| Authors: | Nakamura K. Murakami E. Kimura S. |
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| Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo; |
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| Abstract: | We have investigated the hot carrier (HC) reliability of nMOSFETs with an ultrashallow source/drain (S/D) extension, and found that lightly doped drain (LDD)-type HC degradation is accelerated. The lifetime strongly depends on the extension implantation dose or the implantation angle. A reduced overlap region between the gate electrode and drain diffusion seemed to exaggerate the LDD-type HC degradation. Angled implantation at over 10° effectively suppressed the degradation |
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