| A Novel Structure of ZnS：Tm^3＋ TFEL Device |
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| 引用本文： | 杨胜,何大伟,成正维,邓朝勇,关亚菲.A Novel Structure of ZnS：Tm^3＋ TFEL Device[J].中国稀土学报(英文版),2002,20(5):522-524. |
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| 作者姓名： | 杨胜 何大伟 成正维 邓朝勇 关亚菲 |
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| 作者单位： | InstituteofOptoelectronicTechnology,NorthernJiaotongUniversity,Beifing100044,China |
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| 基金项目： | ProjectSupportedbytheNationalNaturalScienceFoundationofChina ( 5 9982 0 0 1 )andtheNationalNaturalScienceFounda
tionofBeijing( 40 1 2 0 1 0 ) |
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| 摘 要： | A novel ZnS :TmF3 TFEL device with the structure of ITO/SiO2/ZnS : TmF3/SiO2/ZnS : TmF3/SiO2/Al was prepared by e-beam evaporation method. The EL emission spectra show that the brightness of the novel structure devices greatly increases compared with that of devices with traditional double insulator structure, and the ratio of blue emission to red emission of the novel structure device is also improved. The improvement of the EL characteristics of this kind TFEL device is attributed to both of the electron acceleration and the ZnS/SiO2 interface.
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| 关 键 词： | 热电子 电致发光 TFEL ZnS 稀土 掺杂 ITO／SiO2／ZnS TmF3／SiO2／ZnS TmF3／SiO2／Al 结构 |
A Novel Structure of ZnS:Tm3+ TFEL Device |
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| Yang Sheng,He Dawei,Cheng Zhengwei Deng Chaoyong,Guan Yafei.A Novel Structure of ZnS:Tm3+ TFEL Device[J].Journal of Rare Earths,2002,20(5):522-524. |
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| Authors: | Yang Sheng He Dawei Cheng Zhengwei Deng Chaoyong Guan Yafei |
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| Abstract: | A novel ZnS:TmF 3 TFEL device with the structure of ITO/SiO 2/ ZnS:TmF 3/SiO 2/ZnS:TmF 3/SiO 2/Al was prepared by e beam evaporation method. The EL emission spectra show that the brightness of the novel structure devices greatly increases compared with that of devices with traditional double insulator structure, and the ratio of blue emission to red emission of the novel structure device is also improved. The improvement of the EL characteristics of this kind TFEL device is attributed to both of the electron acceleration and the ZnS/SiO 2 interface. |
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| Keywords: | rare earths thin Film Electroluminescence(TFEL) hot electron acceleration |
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