| PGA370高密度陶瓷封装局部镀金 |
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| 引用本文： | 刘巧明,夏传义,张志谦.PGA370高密度陶瓷封装局部镀金[J].电镀与涂饰,2001,20(4):23-28. |
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| 作者姓名： | 刘巧明 夏传义 张志谦 |
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| 作者单位： | 信息产业部电子第十三研究所, |
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| 摘 要： | 研究了在陶瓷PGA370和RP54等具有分离（导体） 结构的金属导体和引脚的高密度封装的局部镀金技术。结果表明：采用分步化学镀和电镀相结合的方法，适当控制化学镀和电镀工艺条件，可以成功地实现上述封装的局部镀金。
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| 关 键 词： | 高密度陶瓷 封装 化学镀镍 局部镀金 工艺条件 集成电路 |
| 文章编号： | 1001-227(2001)04-0023-03 |
The selective gold plating for PGA370 high density ceramic packages |
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| LIU Qiao-ming,XIA Chuan-yi,ZHANG Zhi-qian.The selective gold plating for PGA370 high density ceramic packages[J].Electroplating & Finishing,2001,20(4):23-28. |
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| Authors: | LIU Qiao-ming XIA Chuan-yi ZHANG Zhi-qian |
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| Abstract: | Technology of the selective gold plating for PGA370 and RP54 high density ceramic packages which constructed with the separated metallic conductors and leads has been developed. The results show that the selective gold plating of the above mentioned packages could be implemented successfully with the combination of the fractional electroless and electroplating under suitably controlled plating conditions. |
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| Keywords: | high density packages electroless nickel plating selective gold plating |
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