| FDTD法分析高速集成电路芯片内互连线 |
| |
| 引用本文： | 袁正宇,李征帆,邹瑉珋.FDTD法分析高速集成电路芯片内互连线[J].电子学报,2000,28(2):14-16. |
| |
| 作者姓名： | 袁正宇 李征帆 邹瑉珋 |
| |
| 作者单位： | 上海交通大学电子工程系,上海 200030 |
| |
| 基金项目： | 国家自然科学基金，博士点基金 |
| |
| 摘 要： | 本文首次利用时域有限差分(FDTD)法分析了高速集成电路芯片内半导体基片上的有耗互连传输线的电特性.文中提出了有耗吸收边界条件,推导了不同媒质交界面上的边界条件通用格式.在FDTD分析的基础上,得到传输线各种参数的频变特性,为芯片内电路模拟提供了可靠的参数.
|
| 关 键 词： | 高速集成电路 时域有限差分(FDTD)法 有耗吸收边界条件 |
| 收稿时间： | 1998-09-22 |
Analysis of On-chip Interconnection Lines in High-speed IC by the FDTD Method |
| |
| YUAN Zheng-yu,LI Zheng-fan,ZOU Min-liu.Analysis of On-chip Interconnection Lines in High-speed IC by the FDTD Method[J].Acta Electronica Sinica,2000,28(2):14-16. |
| |
| Authors: | YUAN Zheng-yu LI Zheng-fan ZOU Min-liu |
| |
| Affiliation: | Department of Electronic Engineering,Shanghai Jiaotong University,Shanghai 200030,China |
| |
| Abstract: | A full wave analysis of lossy interconnection lines on doped semiconductor substrates in high speed integrated circuits is carried out by means of a finite difference time domain (FDTD) approach.By using lossy absorbing boundary conditions (LABCs) and an efficient calculation procedure for lossy structures,frequency dependent line parameters are calculated over a wide frequency range.All these provide the reliable parameters for the circuit simulation of IC. |
| |
| Keywords: | hgih speed integrated circuits finite difference time domain (FDTD) method lossy absorbing boundary condition |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子学报》浏览原始摘要信息 |
|
点击此处可从《电子学报》下载全文 |
