Current mechanism and band alignment of Al(Pt)/HfGdO/Ge capacitors |
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| Authors: | Yuan Junjun Fang Zebo Zhu Yanyan Yao Bo Liu Shiyan He Gang Tan Yongsheng |
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| Affiliation: | 1. Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China;Department of Physics, Shaoxing University, Shaoxing 312000, China;2. Department of Physics, Shaoxing University, Shaoxing 312000, China;3. Department of Mathematics and Physics, Shanghai University of Electric Power, Shanghai 200090, China;4. School of Physics and Materials Science, Anhui Key Laboratory of Information Materials and Devices, Anhui University, Hefei 230039, China |
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| Abstract: | HfGdO high-k gate dielectric thin films were deposited on Ge substrates by radio-frequency magnetron sputtering. The current transport properties of Al(Pt)/HfGdO/Ge MOS structures were investigated at room temperature. The results show that the leakage currents are mainly induced by Frenkel-Poole emissions at a low electric field. At a high electric field, Fowler Nordheim tunneling dominates the current. The energy barriers were obtained by analyzing the Fowler Nordheim tunneling characteristics, which are 1.62 eV and 2.77 eV for Al/HfGdO and Pt/HfGdO, respectively. The energy band alignments for metal/HfGdO/Ge capacitors are summarized together with the results of current-voltage and the x-ray photoelectron spectroscopy. |
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| Keywords: | high-k film leakage current charge conduction |
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