| 905nm隧道带间级联非耦合双有源区半导体激光器 |
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| 引用本文： | 司东海,李建军,付莹莹,邓军,韩军.905nm隧道带间级联非耦合双有源区半导体激光器[J].光电子．激光,2016,27(2):139-144. |
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| 作者姓名： | 司东海 李建军 付莹莹 邓军 韩军 |
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| 作者单位： | 北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124 |
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| 基金项目： | 北京市教委能力提升(PXM201401420407000018)的资助项目 (北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124) |
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| 摘 要： | 通过对有源区、波导层、限制层和隧道结的分析 ,设计了激射波长为905nm的隧道带间级联非耦合双有源区半导体激 光器。采用金属有机物化学汽相淀积(MOCVD)系统外延法生长了器件,并经过光刻、 腐蚀、解理和焊装等工艺,制备了激射波长为905nm的隧道带间级联 非耦合双有源区半导体激光器。腔面 未镀膜时,在1.2A的脉冲注入电流下,器件的峰值波长为904.4nm,垂直远场为单峰,发 散角为25.8°,表明两个有源区的光场未发生耦合,斜率效率为1.12W/A,为相同结构单有源区器件的1.9倍。
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| 关 键 词： | 半导体激光器 隧道结 非耦合 |
| 收稿时间： | 2015/9/29 0:00:00 |
905nm uncoupled double active region semiconductor laser with tunnel junction |
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| Affiliation: | Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China |
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| Abstract: | A tunnel concatenation uncoupled semiconductor laser with two active regions and lasing wavelength of 905nm is designed through anal yzing the active region,waveguide layer,cladding layer and tunnel junction.Devic e is epitaxially grown by metal organic chemical vapor deposition (MOCVD) method,and tunnel concatenation uncoupled semiconducto r laser is realized after lithography,etching,annealing,cleavage,welding and o ther technology.The results show that the peak wavelength is 904.4nm under pulse current of 1.2A w ithout facet coating,and the slope efficiency is 1.12W/A,which is 1.9times mor e than that of the regular laser with the same structure.There is a single peak in vertical far field, and the divergence angle is 25.8°,which demonstrates that the optical field is uncoupled. |
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| Keywords: | semiconductor laser tunnel junction uncoupled |
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