905nm隧道带间级联非耦合双有源区半导体激光器 |
| |
引用本文: | 司东海,李建军,付莹莹,邓军,韩军. 905nm隧道带间级联非耦合双有源区半导体激光器[J]. 光电子.激光, 2016, 27(2): 139-144 |
| |
作者姓名: | 司东海 李建军 付莹莹 邓军 韩军 |
| |
作者单位: | 北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124;北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124 |
| |
基金项目: | 北京市教委能力提升(PXM201401420407000018)的资助项目 (北京工业大学 光电子技术省部共建教育部重点实验室,北京 100124) |
| |
摘 要: | 通过对有源区、波导层、限制层和隧道结的分析 ,设计了激射波长为905nm的隧道带间级联非耦合双有源区半导体激 光器。采用金属有机物化学汽相淀积(MOCVD)系统外延法生长了器件,并经过光刻、 腐蚀、解理和焊装等工艺,制备了激射波长为905nm的隧道带间级联 非耦合双有源区半导体激光器。腔面 未镀膜时,在1.2A的脉冲注入电流下,器件的峰值波长为904.4nm,垂直远场为单峰,发 散角为25.8°,表明两个有源区的光场未发生耦合,斜率效率为1.12W/A,为相同结构单有源区器件的1.9倍。
|
关 键 词: | 半导体激光器 隧道结 非耦合 |
收稿时间: | 2015-09-29 |
905nm uncoupled double active region semiconductor laser with tunnel junction |
| |
Affiliation: | Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China;Key Laboratory of Optoelectronics Technology of Ministry of Education of China, Beijing University of Technology,Beijing 100124,China |
| |
Abstract: | A tunnel concatenation uncoupled semiconductor laser with two active regions and lasing wavelength of 905nm is designed through anal yzing the active region,waveguide layer,cladding layer and tunnel junction.Devic e is epitaxially grown by metal organic chemical vapor deposition (MOCVD) method,and tunnel concatenation uncoupled semiconducto r laser is realized after lithography,etching,annealing,cleavage,welding and o ther technology.The results show that the peak wavelength is 904.4nm under pulse current of 1.2A w ithout facet coating,and the slope efficiency is 1.12W/A,which is 1.9times mor e than that of the regular laser with the same structure.There is a single peak in vertical far field, and the divergence angle is 25.8°,which demonstrates that the optical field is uncoupled. |
| |
Keywords: | semiconductor laser tunnel junction uncoupled |
|
| 点击此处可从《光电子.激光》浏览原始摘要信息 |
|
点击此处可从《光电子.激光》下载全文 |
|