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Photoresponse recovery in silicon photodiodes upon VUV irradiation |
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| Authors: | V. V. Zabrodskiy P. N. Aruev V. P. Belik B. Ya. Ber D. Yu. Kazantsev M. V. Drozdova N. V. Zabrodskaya M. S. Lazeeva A. D. Nikolenko V. L. Sukhanov V. V. Filimonov E. V. Sherstnev |
| Affiliation: | 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 2. St. Petersburg State Polytechnic University, St. Petersburg, 195251, Russia 3. Budker Institute of Nuclear Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
| Abstract: | The spatial homogeneity of the photoresponse is studied for silicon photodiodes based on p-n and n-p junctions a year after their irradiation at a wavelength of 121.6 nm and those based on n-p junctions four years after their irradiation with soft X-rays. It is demonstrated that silicon photodiodes based on p-n junctions exhibit a photoresponse recovery effect on being irradiated at a wavelength of 121.6 nm. No recovery effect is observed for silicon photodiodes based on n-p structures. |
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