| 二氧化硅基质中包埋硅纳米晶薄膜的光学性质研究 |
| |
| 引用本文： | 支壮志,祁阳,杨华哲,魏葳. 二氧化硅基质中包埋硅纳米晶薄膜的光学性质研究[J]. 真空科学与技术学报, 2006, 26(5): 381-384 |
| |
| 作者姓名： | 支壮志 祁阳 杨华哲 魏葳 |
| |
| 作者单位： | 东北大学材料物理化学研究所,沈阳,110004 |
| |
| 摘 要： | 本文采用等离子体增强化学气相沉积（PECVD）的方法，在不同的SiH4和CO2气体流量比率（GFRRSC）下，制备了基质中包埋硅纳米晶的二氧化硅薄膜。微区拉曼光谱计算结果表明，随着GFRRSC降低，硅晶粒平均尺寸逐渐减小。吸收光谱的计算结果表明，由量子限制效应所致光学带隙随着GFRRSC降低而逐渐展宽。在1．4eV～2．4eV能量区间发现多个发光峰。在低温下（80K）观测到声子参与的发射光谱，表明在1．7eV附近的发光峰源于Si-O振动模式参与的Si-SiO2界面的跃迁。
|
| 关 键 词： | 光致发光 拉曼光谱分析 声子 |
| 文章编号： | 1672-7126（2006）05-381-04 |
| 收稿时间： | 2005-12-13 |
| 修稿时间： | 2005-12-13 |
Optical Properties of SiO2 Films with Nano-silicon Crystal Grains Embedded |
| |
| Zhi Zhuangzhi,Qi Yang,Yang Huazhe,Wei Wei. Optical Properties of SiO2 Films with Nano-silicon Crystal Grains Embedded[J]. JOurnal of Vacuum Science and Technology, 2006, 26(5): 381-384 |
| |
| Authors: | Zhi Zhuangzhi Qi Yang Yang Huazhe Wei Wei |
| |
| Affiliation: | Institute of Material Physics and Chemistry, Northeastern University, Shenyang, 110004, China |
| |
| Abstract: | SiO_2 films with nano silicon crystalline grains embedded were grown by plasma enhanced chemical vapor deposition(PECVD) at different ratios of the gas flow rate of SiH_4 and CO_2 mixture.The films were characterized with Raman spectroscopy,absorption spectroscopy,and photon luminescence spectroscopy(PL)at room temperature and at low temperatures ranging from 80 K to 280 K.The results show that lowering the gas flow ratio results in shrinking of the averaged Si nano-grain size and broadening of the optical energy gap induced by quantum confinement.We suggest that the PL peak at 1.7 eV,observed at different temperatures,80 K in particular,results from the transition involving Si-O phonons at Si-SiO_2 interface. |
| |
| Keywords: | PECVD |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
