Photo- and thermo-induced changes in the properties of thin amorphous As-S films |
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Authors: | K Petkov M Vlchek M Frumar |
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Affiliation: | (1) Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, 1040 Sofia, Bulgaria;(2) University of Chemical Technology, 53210 Pardubice, Czechoslovakia |
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Abstract: | Changes in transmittance, refractive index, transmissivity in the infrared spectral region, and activation energy of the dissolution process were studied for thin films of the system As
x
S100–x
(28.6 x45) as they result from illumination and annealing at temperatures of T
g
. It is assumed that the irreversible changes occurring in the layers after treatment are accompanied by an increase in the concentration of As-S bonds. This leads to an increase in dissolution rate, a decrease in the activation energy of the process, and considerable changes in the absorption peaks at 370 and 310 cm–1 obtained by infrared spectroscopy. It is shown that the photo- and thermoinduced changes in as-deposited chalcogenide films follow identical courses. The results obtained are explained from the viewpoint of the structural changes occurring in chalcogenide films. |
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Keywords: | |
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