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TDEG in In0.53Ga0.47As-InP heterojunction grown by chloride VPE |
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| Authors: | Komeno J. Takikawa M. Ozeki M. |
| Affiliation: | Fujitsu Laboratories Ltd., Atsugi, Japan; |
| Abstract: | We report the first successful growth of selectively doped In0.53Ga0.47As-InP hcterojunctions by the chloride vapour phase epitaxy, and the observation of TDEG with a maximum electron mobility of 106 000 cm2 V?1 s?1 at 4.2 K. |
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