Thermal stability of cobalt and nickel silicides |
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| Authors: | MC Poon CH Ho F Deng SS Lau H Wong |
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| Affiliation: | aDepartment of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clearwater Bay, Hong Kong;bDepartment of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407, USA;cDepartment of Electronic Engineering, City University of Hong Kong, Kowloontong, Hong Kong |
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| Abstract: | Thermal stability of cobalt and nickel silicides on crystalline Si (c-Si) and amorphous Si (a-Si) has been investigated. We have found that CoSi2 is thermally stable on a-Si and c-Si substrates up to 950°C for 30 min. NiSi is stable and shows low resistivity on c-Si at around 700°C for 30 min, but is unstable on a-Si substrate even after annealing at 400°C. |
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