| Ku波段低相位噪声体效应管 |
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| 引用本文： | 张晓,戴莉,刘萍,单云东.Ku波段低相位噪声体效应管[J].电子工程师,2004,30(7):14-16. |
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| 作者姓名： | 张晓 戴莉 刘萍 单云东 |
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| 作者单位： | 南京电子器件研究所,江苏省,南京市,210016 |
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| 摘 要： | 体效应振荡器相位噪声主要决定于体效应管的噪声.文中介绍了Ku波段低相位噪声体效应管的设计与工艺实现,并制作出了与设计结果基本一致的器件.该器件在Ku波段高端输出功率大于150 mW,转换效率大于5%.将其安装于低相噪介质振荡器中,在保证一定的输出功率的情况下,相位噪声小于-98dBc/Hz(偏离载频为5 kHz时),-10dB谱线宽度小于200Hz.
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| 关 键 词： | 体效应二极管 相位噪声 微波振荡器 砷化镓 |
| 修稿时间： | 2004年3月11日 |
Ku Band Low Phase Noise Gunn Diodes |
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| Zhang Xiao,Dai Li,Liu Ping,Shan Yundong.Ku Band Low Phase Noise Gunn Diodes[J].Electronic Engineer,2004,30(7):14-16. |
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| Authors: | Zhang Xiao Dai Li Liu Ping Shan Yundong |
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| Abstract: | The phase noise of Gunn oscillator is determined mainly by the characteristics of the noise of Gunn diode.This paper describes the design and implementation of GaAs Gunn diodes of low phase noise at Ku band. The design shows good agreement with experimental results. The minimum output power is more than 150 mW high end of at Ku band using a test cavity, and the efficiency of conversion is more than 5%. The best level of low phase noise oscillator achieved is -98 dBc/Hz/(for 5 kHz) with a practical cavity, for a specified level of output power. |
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| Keywords: | Gunn diodes phase noise microwave oscillator GaAs |
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