Optical, electrical and thermoelectric power studies of Al-Sb thin film bilayer structure |
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Authors: | M Singh J S Arora Y K Vijay M Sudharshan |
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Affiliation: | (1) Department of Physics, University of Rajasthan, 302 004 Jaipur, India;(2) Kolkata Centre, IUC-DAE, 700 091 Bidhan Nagar, Kolkata, India |
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Abstract: | The III-V semiconductors are of great importance due to their applications in various electro-optic devices. The Al-Sb thin
film was deposited on glass substrate by thermal evaporation method at a pressure of 10-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed
positive thermoelectric power indicates that Al-Sb thin films arep-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the inter-diffusion
concentration varies with temperature. |
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Keywords: | Annealing interdiffusion semiconductor bilayer RBS |
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