Improvement of semiconductor detector characteristics during supercurrent proton irradiation

Volt-ampère characteristics of Si p-type detectors are established to improve after pulse supercurrent irradiation with low energy protons. Appreciable improvement of energy resolution is observed for detectors irradiatied with the supercurrent proton beam within a dose interval from 10¹¹ to 5×10¹² proton cm⁻². Radiational resource of operation increases from 2.3 × 10¹⁰ to 3.7×10 ¹¹ proton cm⁻² for detectors which were pre-irradiated by the supercurrent proton beam.