| AlGaN/GaN HEMT器件欧姆接触多步退火工艺的分析与优化 |
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| 引用本文： | 颜伟,张仁平,杜彦东,韩伟华,杨富华. AlGaN/GaN HEMT器件欧姆接触多步退火工艺的分析与优化[J]. 半导体学报, 2012, 33(6): 064005-6 |
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| 作者姓名： | 颜伟 张仁平 杜彦东 韩伟华 杨富华 |
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| 作者单位： | Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| 基金项目： | supported by the National Basic Research Program of China（No.2010CB934104） |
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| 摘 要： | 利用Ti/Al/Ni/Au的多步退火工艺能够在 AlGaN/GaN HEMT上制作出低接触电阻，表面形貌平整的欧姆接触。本文通过实验对多步退火工艺的机制进行了详细地分析并对多步退火工艺进行了优化。实验结果显示出调整不同的退火的时间和温度在接触电阻和表面形貌的优化中起到了至关重要的作用。取得高质量的欧姆接触的关键是通过调整退火的时间和温度以平衡金属与金属之间，金属与半导体之间的各种反应的速率。我们利用优化后多步退火工艺在未掺杂AlGaN/GaN结构上制作出了低接触电阻的欧姆接触，其比接触电阻率为3.22?10-7Ω.cm2。
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| 关 键 词： | AlGaN HEMT器件 欧姆接触 退火工艺 多步 铝层 金 镍 |
| 修稿时间： | 2012-01-10 |
Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process |
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| Yan Wei,Zhang Renping,Du Yandong,Han Weihua and Yang Fuhua. Analysis of the ohmic contacts of Ti/Al/Ni/Au to AlGaN/GaN HEMTs by the multi-step annealing process[J]. Chinese Journal of Semiconductors, 2012, 33(6): 064005-6 |
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| Authors: | Yan Wei Zhang Renping Du Yandong Han Weihua Yang Fuhua |
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| Affiliation: | Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | |
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| Keywords: | AlGaN GaN high electron mobility transistor annealing ohmic contact |
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