| 丝网印刷制备黑硅太阳电池及其性能表征 |
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| 引用本文： | 汤叶华,周春兰,王文静,周肃,赵彦,赵雷,李海玲,闫保军,陈静伟,费建明,曹红彬.丝网印刷制备黑硅太阳电池及其性能表征[J].半导体学报,2012,33(6):064007-5. |
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| 作者姓名： | 汤叶华 周春兰 王文静 周肃 赵彦 赵雷 李海玲 闫保军 陈静伟 费建明 曹红彬 |
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| 作者单位： | Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Eoplly New Energy Technology Co., Ltd., Nantong 226602, China;Eoplly New Energy Technology Co., Ltd., Nantong 226602, China |
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| 基金项目： | supported by the Knowledge Innovation Program of the Chinese Academy of Sciences（No.KGCX2-YW-382）; the National Program on Key Basic Research Project of China（No.2010CB933804） |
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| 摘 要： | 采用纳米金颗粒催化腐蚀的方法在硅片表面制备得纳米多孔结构，实现了1.5%（300-1200 nm）的权重反射率。本文采用OPCl3扩散、丝网印刷制备前后电极及共烧等常规太阳电池工艺来制备黑硅太阳电池，对不同腐蚀深度及不同扩散方阻的黑硅太阳电池片的输出电性能进行了分析，并对制备工艺进行了优化，提高了电池的转换效率，实现了丝网印刷制备12.17%的黑硅太阳电池转换效率。
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| 关 键 词： | 硅太阳能电池 纳米多孔结构 工艺制作 丝网印刷 黑色 表征 化学蚀刻 输出特性 |
Characterization of the nanosized porous structure of black Si solar cells fabricated via a screen printing process |
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| Tang Yehu,Zhou Chunlan,Wang Wenjing,Zhou Su,Zhao Yan,Zhao Lei,Li Hailing,Yan Baojun,Chen Jingwei,Fei Jianming and Cao Hongbin.Characterization of the nanosized porous structure of black Si solar cells fabricated via a screen printing process[J].Chinese Journal of Semiconductors,2012,33(6):064007-5. |
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| Authors: | Tang Yehu Zhou Chunlan Wang Wenjing Zhou Su Zhao Yan Zhao Lei Li Hailing Yan Baojun Chen Jingwei Fei Jianming and Cao Hongbin |
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| Affiliation: | Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Key Laboratory of Solar Thermal Energy and Photovoltaic System, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;Eoplly New Energy Technology Co., Ltd., Nantong 226602, China;Eoplly New Energy Technology Co., Ltd., Nantong 226602, China |
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| Abstract: | A silicon (Si) surface with a nanosized porous structure was formed via simple wet chemical etching catalyzed by gold (Au) nanoparticles on p-type Cz-Si (100). The average reflectivity from 300 to 1200 nm was less than 1.5%. Black Si solar cells were then fabricated using a conventional production process. The results reflected the output characteristics of the cells fabricated using different etching depths and emitter dopant profiles. Heavier dopants and shallower etching depths should be adopted to optimize the black Si solar cell output characteristics. The efficiency at the optimized etching time and dopant profile was 12.17%. However, surface passivation and electrode contact due to the nanosized porous surface structure are still obstacles to obtaining high conversion efficiency for the black Si solar cells. |
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| Keywords: | black silicon noble metal nanoparticles catalysis nanosized porous solar cells |
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