| 氧化钨纳米结构：可控制备及场发射性能 |
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| 引用本文： | 岳双林,许婷婷,李伟,闫佶,一禾.氧化钨纳米结构：可控制备及场发射性能[J].半导体学报,2012,33(6):063002-4. |
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| 作者姓名： | 岳双林 许婷婷 李伟 闫佶 一禾 |
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| 作者单位： | Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China |
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| 基金项目： | 国家自然科学基金;其它 |
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| 摘 要： | 通过简单调控化学气相沉积反应气压制备了形貌尺寸可控的各种非化学计量比氧化钨纳米结构。场发射研究表明W18O49纳米线具有优异的场发射性能。对于10 μA/cm2的发射电流，其开启电压为7.1 V/μm。 实验中测得最高场发射电流密度4.05mA，对应场强为17.2 V/μm。场发射过程中的热蒸发和脱附测试表明该氧化钨纳米线的场发射再现性很高。
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| 关 键 词： | 非化学计量比氧化钨，场发射 |
| 收稿时间： | 12/2/2011 4:19:13 PM |
Tungsten oxide nanostructures: controllable growth and field emission |
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| Yue Shuanglin,Xu Tingting,Li Wei,Yan Ji and Yi He.Tungsten oxide nanostructures: controllable growth and field emission[J].Chinese Journal of Semiconductors,2012,33(6):063002-4. |
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| Authors: | Yue Shuanglin Xu Tingting Li Wei Yan Ji and Yi He |
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| Affiliation: | Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China;Key Laboratory for Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China |
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| Abstract: | |
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| Keywords: | non-fully oxidized tungsten oxides field emission nanowire |
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