| 低栅漏电的增强型InAlN/GaN MISHEMT |
| |
| 引用本文： | 顾国栋,蔡勇,冯志红,刘波,曾春红,于国浩,董志华,张宝顺. 低栅漏电的增强型InAlN/GaN MISHEMT[J]. 半导体学报, 2012, 33(6): 064004-3 |
| |
| 作者姓名： | 顾国栋 蔡勇 冯志红 刘波 曾春红 于国浩 董志华 张宝顺 |
| |
| 作者单位： | Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
| |
| 基金项目： | 国家自然科学基金 (No. 10990102, No. 60890192, No. 60876009) |
| |
| 摘 要： | 中文：本文报道了采用热氧化的技术实现低栅泄漏电的增强型InAlN/GaN MISHEMT。在VDS=5V和VGS=0V时，关态漏极电流达到了10-7A/mm。器件的阈值电压为2.2V。当VDS=5V时，漏极电流在VGS=4.5V时，达到349mA/mm,在VGS=3.4V时，最大跨导为179ms/mm。在当VGS= -15V时候，器件的反向栅泄漏电流达到4.9?10-7A/mm。
|
| 关 键 词： | 漏电流密度 氮化镓 闸 线性外推法 氧化技术 阈值电压 传输特性 栅偏压 |
| 修稿时间： | 2012-01-05 |
Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current |
| |
| Gu Guodong,Cai Yong,Feng Zhihong,Liu Bo,Zeng Chunhong,Yu Guohao,Dong Zhihua and Zhang Baoshun. Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current[J]. Chinese Journal of Semiconductors, 2012, 33(6): 064004-3 |
| |
| Authors: | Gu Guodong Cai Yong Feng Zhihong Liu Bo Zeng Chunhong Yu Guohao Dong Zhihua Zhang Baoshun |
| |
| Affiliation: | Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China |
| |
| Abstract: | |
| |
| Keywords: | enhancement-mode InAlN/GaN HEMT threshold voltage thermal oxidation gate leakage |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
